High?Temperature Annealing and Patterned AlN/Sapphire Interfaces
نویسندگان
چکیده
Using the example of epitaxial lateral overgrowth AlN on trench-patterned AlN/sapphire templates, impact introducing a high-temperature annealing step into process chain is investigated. Covering open surfaces sapphire trench sidewalls with thin layer found to be necessary preserve shape during annealing. Both influence temperature and duration are To avoid deformation interface annealing, or must low enough. Annealing for 1 h at 1730 °C allow lowest threading dislocation density 3.5 × 108 cm?2 in subsequently grown AlN, while maintaining an uncracked smooth surface over entire 2 in. wafer. Transmission electron microscopy study confirms defect reduction by reveals additional strain relaxation mechanism accumulation horizontal lines between annealed nonannealed AlN. By applying second step, can further reduced 2.5 cm?2.
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ژورنال
عنوان ژورنال: Physica Status Solidi B-basic Solid State Physics
سال: 2021
ISSN: ['1521-3951', '0370-1972']
DOI: https://doi.org/10.1002/pssb.202100187